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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery

Shanghai Juyi Electronic Technology Development Co., Ltd
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    Buy cheap JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery from wholesalers
     
    Buy cheap JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery from wholesalers
    • Buy cheap JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery from wholesalers
    • Buy cheap JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery from wholesalers
    • Buy cheap JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery from wholesalers

    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery

    Ask Lasest Price
    Brand Name : JUYI
    Model Number : JY8N5M
    Price : Negotiable
    Payment Terms : L/C, T/T,Paypal
    Supply Ability : 1000sets/day
    Delivery Time : 5-8 working days
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    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery

    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery


    GENERAL DESCRIPTION
    The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
    FEATURES
    500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
    Fast switching and reverse body recovery
    Excellent package for good heat dissipation
    APPLICATIONS
    Lighting
    High efficiency switch mode power supplies
    PIN DESCRIPTION
    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery
    Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
    SymbolParameterLimitUnit
    VDSDrain-Source Voltage500V
    VGSGate-Source Voltage±30V
    ID
    Continuous Drain
    Current
    Tc=25ºC8A
    Tc=100ºC4.8
    IDMPulsed Drain Current30A
    PDMaximum Power Dissipation80W
    TJ TSTGOperating Junction and Storage Temperature Range-55+150ºC
    RθJCThermal Resistance-Junction to Case1.56℃/W

    Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
    Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

    JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery


    Quality JUYI 500V/8A N Channel Enhancement Mode Power MOSFET With Fast Switching And Reverse Body Recovery for sale
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